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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > 2N7635-GA
2N7635-GA
2N7635-GA
Artikelnummer:
2N7635-GA
Hersteller:
GeneSiC Semiconductor
Beschreibung:
TRANS SJT 650V 4A TO-257
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
11938 Pieces
Lieferzeit:
1-2 days
Datenblatt:
2N7635-GA.pdf
Anfrage

Einführung

We can supply 2N7635-GA, use the request quote form to request 2N7635-GA pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2N7635-GA.The price and lead time for 2N7635-GA depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2N7635-GA.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:-
Vgs (Max):-
Technologie:SiC (Silicon Carbide Junction Transistor)
Supplier Device-Gehäuse:TO-257
Serie:-
Rds On (Max) @ Id, Vgs:415 mOhm @ 4A
Verlustleistung (max):47W (Tc)
Verpackung:Bulk
Verpackung / Gehäuse:TO-257-3
Andere Namen:1242-1146
Betriebstemperatur:-55°C ~ 225°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:324pF @ 35V
Typ FET:-
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):-
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:650V 4A (Tc) (165°C) 47W (Tc) Through Hole TO-257
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A (Tc) (165°C)
Email:[email protected]

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