2N7637-GA
2N7637-GA
Artikelnummer:
2N7637-GA
Hersteller:
GeneSiC Semiconductor
Beschreibung:
TRANS SJT 650V 7A TO-257
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
30852 Pieces
Lieferzeit:
1-2 days
Datenblatt:
2N7637-GA.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:-
Vgs (Max):-
Technologie:SiC (Silicon Carbide Junction Transistor)
Supplier Device-Gehäuse:TO-257
Serie:-
Rds On (Max) @ Id, Vgs:170 mOhm @ 7A
Verlustleistung (max):80W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-257-3
Andere Namen:1242-1148
Betriebstemperatur:-55°C ~ 225°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:720pF @ 35V
Typ FET:-
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):-
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:650V 7A (Tc) (165°C) 80W (Tc) Through Hole TO-257
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:7A (Tc) (165°C)
Email:[email protected]

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