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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > APT80SM120S
APT80SM120S
Modèle de produit:
APT80SM120S
Fabricant:
Microsemi
La description:
POWER MOSFET - SIC
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
55063 Pieces
Heure de livraison:
1-2 days
Fiche technique:
APT80SM120S.pdf
Enquête

introduction

We can supply APT80SM120S, use the request quote form to request APT80SM120S pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT80SM120S.The price and lead time for APT80SM120S depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT80SM120S.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):+25V, -10V
La technologie:SiCFET (Silicon Carbide)
Package composant fournisseur:D3Pak
Séries:-
Rds On (Max) @ Id, Vgs:55 mOhm @ 40A, 20V
Dissipation de puissance (max):625W (Tc)
Emballage:Bulk
Package / Boîte:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Charge de la porte (Qg) (Max) @ Vgs:235nC @ 20V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):20V
Tension drain-source (Vdss):1200V
Description détaillée:N-Channel 1200V 80A (Tc) 625W (Tc) Surface Mount D3Pak
Courant - Drainage continu (Id) à 25 ° C:80A (Tc)
Email:[email protected]

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