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TPN4R712MD,L1Q
- Part Number:
- TPN4R712MD,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- MOSFET P-CH 20V 36A 8TSON ADV
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 20163 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- TPN4R712MD,L1Q.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 1.2V @ 1mA |
| Vgs (Max): | ±12V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Series: | U-MOSVI |
| Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 18A, 4.5V |
| Power Dissipation (Max): | 42W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-PowerVDFN |
| Other Names: | TPN4R712MD,L1Q(M TPN4R712MDL1QTR |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 5V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Email: | [email protected] |
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