SIZ998DT-T1-GE3
SIZ998DT-T1-GE3
Part Number:
SIZ998DT-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET 2 N-CH 30V 8-POWERPAIR
Available Quantity:
53120 Pieces
Delivery Time:
1-2 days
Data sheet:
SIZ998DT-T1-GE3.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:2.2V @ 250µA
Supplier Device Package:8-PowerPair®
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V
Power - Max:20.2W, 32.9W
Packaging:Tape & Reel (TR)
Package / Case:8-PowerWDFN
Other Names:SIZ998DT-T1-GE3-ND
SIZ998DT-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:930pF @ 15V, 2620pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:8.1nC @ 4.5V, 19.8nC @ 4.5V
FET Type:2 N-Channel (Dual), Schottky
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair®
Current - Continuous Drain (Id) @ 25°C:20A (Tc), 60A (Tc)
Email:[email protected]

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