SIR616DP-T1-GE3
SIR616DP-T1-GE3
Part Number:
SIR616DP-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 200V 20.2A SO-8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
45519 Pieces
Delivery Time:
1-2 days
Data sheet:
SIR616DP-T1-GE3.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for SIR616DP-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIR616DP-T1-GE3 by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:ThunderFET®
Rds On (Max) @ Id, Vgs:50.5 mOhm @ 10A, 10V
Power Dissipation (Max):52W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® SO-8
Other Names:SIR616DP-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1450pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:28nC @ 7.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Email:[email protected]

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