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SIDR668DP-T1-GE3
- Part Number:
- SIDR668DP-T1-GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET N-CH 100V
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 71747 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- SIDR668DP-T1-GE3.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PowerPAK® SO-8DC |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 20A, 10V |
| Power Dissipation (Max): | 6.25W (Ta), 125W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | PowerPAK® SO-8 |
| Other Names: | SIDR668DP-T1-GE3TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 32 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 108nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Drain to Source Voltage (Vdss): | 100V |
| Detailed Description: | N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC |
| Current - Continuous Drain (Id) @ 25°C: | 23.2A (Ta), 95A (Tc) |
| Email: | [email protected] |
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