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RT1C060UNTR
- Part Number:
- RT1C060UNTR
- Manufacturer:
- LAPIS Semiconductor
- Description:
- MOSFET N-CH 20V 6A TSST8
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 70028 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- RT1C060UNTR.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Vgs (Max): | ±10V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-TSST |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 28 mOhm @ 6A, 4.5V |
| Power Dissipation (Max): | 650mW (Ta) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 8-SMD, Flat Lead |
| Other Names: | RT1C060UNCT RT1C060UNTRCT RT1C060UNTRCT-ND |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | N-Channel 20V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
| Email: | [email protected] |
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