NVD5802NT4G-TB01
NVD5802NT4G-TB01
Part Number:
NVD5802NT4G-TB01
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 40V 101A DPAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
31214 Pieces
Delivery Time:
1-2 days
Data sheet:
NVD5802NT4G-TB01.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK
Series:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:4.4 mOhm @ 50A, 10V
Power Dissipation (Max):2.5W (Ta), 93.75W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:5300pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:100nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):40V
Detailed Description:N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C:16.4A (Ta), 101A (Tc)
Email:[email protected]

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