NTMS10P02R2G
Part Number:
NTMS10P02R2G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET P-CH 20V 8.8A 8-SOIC
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
72594 Pieces
Delivery Time:
1-2 days
Data sheet:
NTMS10P02R2G.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:1.2V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:-
Rds On (Max) @ Id, Vgs:14 mOhm @ 10A, 4.5V
Power Dissipation (Max):1.6W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:NTMS10P02R2GOS
NTMS10P02R2GOS-ND
NTMS10P02R2GOSTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:17 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3640pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta)
Email:[email protected]

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