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MT3S113TU,LF
- Part Number:
- MT3S113TU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- RF SIGE HETEROJUNCTION BIPOLAR N
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15470 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- MT3S113TU,LF.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Voltage - Collector Emitter Breakdown (Max): | 5.3V |
| Transistor Type: | NPN |
| Supplier Device Package: | UFM |
| Series: | - |
| Power - Max: | 900mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 3-SMD, Flat Leads |
| Other Names: | MT3S113TU,LF(B MT3S113TULF MT3S113TULF(B MT3S113TULFTR |
| Operating Temperature: | 150°C (TJ) |
| Noise Figure (dB Typ @ f): | 1.45dB @ 1GHz |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Gain: | 12.5dB |
| Frequency - Transition: | 11.2GHz |
| Detailed Description: | RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max): | 100mA |
| Email: | [email protected] |
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