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JAN1N6622US
- Part Number:
- JAN1N6622US
- Manufacturer:
- Microsemi
- Description:
- DIODE GEN PURP 660V 2A D5A
- Lead Free Status / RoHS Status:
- Contains lead / RoHS non-compliant
- Available Quantity:
- 12233 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- JAN1N6622US.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Voltage - Peak Reverse (Max): | Standard |
| Voltage - Forward (Vf) (Max) @ If: | 1.2A |
| Voltage - Breakdown: | D-5A |
| Series: | Military, MIL-PRF-19500/585 |
| RoHS Status: | Bulk |
| Reverse Recovery Time (trr): | Fast Recovery = 200mA (Io) |
| Resistance @ If, F: | 10pF @ 10V, 1MHz |
| Polarization: | SQ-MELF, A |
| Other Names: | 1086-19963 1086-19963-MIL |
| Operating Temperature - Junction: | 30ns |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | JAN1N6622US |
| Expanded Description: | Diode Standard 660V 1.2A Surface Mount D-5A |
| Diode Configuration: | 500nA @ 660V |
| Description: | DIODE GEN PURP 660V 2A D5A |
| Current - Reverse Leakage @ Vr: | 1.4V @ 1.2A |
| Current - Average Rectified (Io) (per Diode): | 660V |
| Capacitance @ Vr, F: | -65°C ~ 150°C |
| Email: | [email protected] |
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