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IXTF6N200P3
- Part Number:
- IXTF6N200P3
- Manufacturer:
- IXYS Corporation
- Description:
- MOSFET N-CH
- Available Quantity:
- 9682 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- IXTF6N200P3.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | ISOPLUS i4-PAC™ |
| Series: | Polar™ |
| Rds On (Max) @ Id, Vgs: | 4.2 Ohm @ 3A, 10V |
| Power Dissipation (Max): | 215W (Tc) |
| Package / Case: | ISOPLUSi5-Pak™ |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Manufacturer Standard Lead Time: | 24 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds: | 3700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 143nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 2000V |
| Detailed Description: | N-Channel 2000V 4A (Tc) 215W (Tc) Through Hole ISOPLUS i4-PAC™ |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Email: | [email protected] |
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