IXTD1R4N60P 11
Part Number:
IXTD1R4N60P 11
Manufacturer:
IXYS Corporation
Description:
MOSFET N-CH 600V
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
49835 Pieces
Delivery Time:
1-2 days
Data sheet:
IXTD1R4N60P 11.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for IXTD1R4N60P 11, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for IXTD1R4N60P 11 by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:5.5V @ 25µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:Die
Series:PolarHV™
Rds On (Max) @ Id, Vgs:9 Ohm @ 700mA, 10V
Power Dissipation (Max):50W (Tc)
Package / Case:Die
Other Names:IXTD1R4N60P11
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:5.2nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 1.4A (Tc) 50W (Tc) Surface Mount Die
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Email:[email protected]

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