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IRLW610ATM
- Part Number:
- IRLW610ATM
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- MOSFET N-CH 200V 3.3A I2PAK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 14828 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- IRLW610ATM.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | I2PAK (TO-262) |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.65A, 5V |
| Power Dissipation (Max): | 3.1W (Ta), 33W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 240pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Drain to Source Voltage (Vdss): | 200V |
| Detailed Description: | N-Channel 200V 3.3A (Tc) 3.1W (Ta), 33W (Tc) Through Hole I2PAK (TO-262) |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
| Email: | [email protected] |
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