FDB13AN06A0
FDB13AN06A0
Part Number:
FDB13AN06A0
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 60V 62A TO-263AB
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
63431 Pieces
Delivery Time:
1-2 days
Data sheet:
FDB13AN06A0.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:13.5 mOhm @ 62A, 10V
Power Dissipation (Max):115W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:FDB13AN06A0CT
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:6 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK
Current - Continuous Drain (Id) @ 25°C:10.9A (Ta), 62A (Tc)
Email:[email protected]

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