EMF8T2R
EMF8T2R
Part Number:
EMF8T2R
Manufacturer:
LAPIS Semiconductor
Description:
TRANS NPN PREBIAS/NPN 0.15W EMT6
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
47740 Pieces
Delivery Time:
1-2 days
Data sheet:
EMF8T2R.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for EMF8T2R, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EMF8T2R by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Voltage - Collector Emitter Breakdown (Max):50V, 12V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Transistor Type:1 NPN Pre-Biased, 1 NPN
Supplier Device Package:EMT6
Series:-
Resistor - Emitter Base (R2):47 kOhms
Resistor - Base (R1):47 kOhms
Power - Max:150mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz, 320MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V / 270 @ 10mA, 2V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA, 500mA
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