CSD18536KTTT
Part Number:
CSD18536KTTT
Manufacturer:
TI
Description:
MOSFET N-CH 60V 200A DDPAK
Lead Free Status / RoHS Status:
Contains lead / RoHS non-compliant
Available Quantity:
41239 Pieces
Delivery Time:
1-2 days
Data sheet:
CSD18536KTTT.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:2.2V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DDPAK/TO-263-3
Series:NexFET™
Rds On (Max) @ Id, Vgs:1.6 mOhm @ 100A, 10V
Power Dissipation (Max):375W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Other Names:296-44122-2
CSD18536KTTT-ND
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):2 (1 Year)
Manufacturer Standard Lead Time:35 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:11430pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:140nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 200A (Ta), 279A (Tc) 375W (Tc) Surface Mount DDPAK/TO-263-3
Current - Continuous Drain (Id) @ 25°C:200A (Ta), 279A (Tc)
Email:[email protected]

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