1N5552US
1N5552US
Part Number:
1N5552US
Manufacturer:
Microsemi
Description:
DIODE GEN PURP 600V 3A D5B
Lead Free Status / RoHS Status:
Contains lead / RoHS non-compliant
Available Quantity:
57235 Pieces
Delivery Time:
1-2 days
Data sheet:
1N5552US.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for 1N5552US, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for 1N5552US by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Voltage - Forward (Vf) (Max) @ If:1.2V @ 9A
Voltage - DC Reverse (Vr) (Max):600V
Supplier Device Package:D-5B
Speed:Standard Recovery >500ns, > 200mA (Io)
Series:-
Reverse Recovery Time (trr):2µs
Packaging:Bulk
Package / Case:SQ-MELF, B
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:7 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Diode Type:Standard
Detailed Description:Diode Standard 600V 3A Surface Mount D-5B
Current - Reverse Leakage @ Vr:1µA @ 600V
Current - Average Rectified (Io):3A
Capacitance @ Vr, F:-
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