SI1035X-T1-GE3
SI1035X-T1-GE3
型號:
SI1035X-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N/P-CH 20V SC-89
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
58567 Pieces
發貨時間:
1-2 days
數據表:
SI1035X-T1-GE3.pdf

簡單介紹

We can supply SI1035X-T1-GE3, use the request quote form to request SI1035X-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI1035X-T1-GE3.The price and lead time for SI1035X-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI1035X-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:400mV @ 250µA (Min)
供應商設備封裝:SC-89-6
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:5 Ohm @ 200mA, 4.5V
功率 - 最大:250mW
封装:Tape & Reel (TR)
封裝/箱體:SOT-563, SOT-666
其他名稱:SI1035X-T1-GE3TR
SI1035XT1GE3
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:33 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:-
柵極電荷(Qg)(Max)@ Vgs:0.75nC @ 4.5V
FET型:N and P-Channel
FET特點:Logic Level Gate
漏極至源極電壓(Vdss):20V
詳細說明:Mosfet Array N and P-Channel 20V 180mA, 145mA 250mW Surface Mount SC-89-6
電流 - 25°C連續排水(Id):180mA, 145mA
基礎部件號:SI1035
Email:[email protected]

快速詢價

型號
數量
公司
邮箱
電話
要求