SI1039X-T1-GE3
SI1039X-T1-GE3
型號:
SI1039X-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET P-CH 12V 0.87A SC89
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
21498 Pieces
發貨時間:
1-2 days
數據表:
SI1039X-T1-GE3.pdf

簡單介紹

We can supply SI1039X-T1-GE3, use the request quote form to request SI1039X-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI1039X-T1-GE3.The price and lead time for SI1039X-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI1039X-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:450mV @ 250µA (Min)
Vgs(最大):±8V
技術:MOSFET (Metal Oxide)
供應商設備封裝:SC-89-6
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:165 mOhm @ 870mA, 4.5V
功率耗散(最大):170mW (Ta)
封装:Cut Tape (CT)
封裝/箱體:SOT-563, SOT-666
其他名稱:SI1039X-T1-GE3CT
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
柵極電荷(Qg)(Max)@ Vgs:6nC @ 4.5V
FET型:P-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):1.8V, 4.5V
漏極至源極電壓(Vdss):12V
詳細說明:P-Channel 12V 870mA (Ta) 170mW (Ta) Surface Mount SC-89-6
電流 - 25°C連續排水(Id):870mA (Ta)
Email:[email protected]

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