HN3C10FUTE85LF
HN3C10FUTE85LF
型號:
HN3C10FUTE85LF
製造商:
Toshiba Semiconductor and Storage
描述:
TRANSISTOR NPN US6
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
54070 Pieces
發貨時間:
1-2 days
數據表:
HN3C10FUTE85LF.pdf

簡單介紹

We can supply HN3C10FUTE85LF, use the request quote form to request HN3C10FUTE85LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HN3C10FUTE85LF.The price and lead time for HN3C10FUTE85LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HN3C10FUTE85LF.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
電壓 - 集電極發射極擊穿(最大):12V
晶體管類型:2 NPN (Dual)
供應商設備封裝:US6
系列:-
功率 - 最大:200mW
封装:Cut Tape (CT)
封裝/箱體:6-TSSOP, SC-88, SOT-363
其他名稱:HN3C10FUTE85LFCT
工作溫度:-
噪聲係數(dB典型值@頻率):1.1dB @ 1GHz
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
獲得:11.5dB
頻率 - 轉換:7GHz
詳細說明:RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
直流電流增益(HFE)(最小值)@ IC,的Vce:80 @ 20mA, 10V
電流 - 集電極(Ic)(最大):80mA
Email:[email protected]

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