HN3C10FUTE85LF
HN3C10FUTE85LF
Part Number:
HN3C10FUTE85LF
Producent:
Toshiba Semiconductor and Storage
Opis:
TRANSISTOR NPN US6
Stan ołowiu / status RoHS:
Bezołowiowa / zgodna z RoHS
Dostępna Ilość:
54070 Pieces
Czas dostawy:
1-2 days
Arkusz danych:
HN3C10FUTE85LF.pdf

Wprowadzenie

We can supply HN3C10FUTE85LF, use the request quote form to request HN3C10FUTE85LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HN3C10FUTE85LF.The price and lead time for HN3C10FUTE85LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HN3C10FUTE85LF.We look forward to working with you to establish long-term relations of cooperation

Specyfikacje

Stan New & Unused, Original Packing
Pochodzenie Contact us
Napięcie - kolektor emiter (Max):12V
Typ tranzystora:2 NPN (Dual)
Dostawca urządzeń Pakiet:US6
Seria:-
Moc - Max:200mW
Opakowania:Cut Tape (CT)
Package / Case:6-TSSOP, SC-88, SOT-363
Inne nazwy:HN3C10FUTE85LFCT
temperatura robocza:-
Noise Figure (dB Typ @ f):1.1dB @ 1GHz
Rodzaj mocowania:Surface Mount
Poziom czułości na wilgoć (MSL):1 (Unlimited)
Status bezołowiowy / status RoHS:Lead free / RoHS Compliant
Zdobyć:11.5dB
Częstotliwość - Transition:7GHz
szczegółowy opis:RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
DC Prąd Zysk (hFE) (min) @ Ic, Vce:80 @ 20mA, 10V
Obecny - Collector (Ic) (maks):80mA
Email:[email protected]

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