TPN4R712MD,L1Q
TPN4R712MD,L1Q
Artikelnummer:
TPN4R712MD,L1Q
Tillverkare:
Toshiba Semiconductor and Storage
Beskrivning:
MOSFET P-CH 20V 36A 8TSON ADV
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
20163 Pieces
Leveranstid:
1-2 days
Datablad:
TPN4R712MD,L1Q.pdf

Introduktion

We can supply TPN4R712MD,L1Q, use the request quote form to request TPN4R712MD,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPN4R712MD,L1Q.The price and lead time for TPN4R712MD,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPN4R712MD,L1Q.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:1.2V @ 1mA
Vgs (Max):±12V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:8-TSON Advance (3.3x3.3)
Serier:U-MOSVI
Rds On (Max) @ Id, Vgs:4.7 mOhm @ 18A, 4.5V
Effektdissipation (Max):42W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:8-PowerVDFN
Andra namn:TPN4R712MD,L1Q(M
TPN4R712MDL1QTR
Driftstemperatur:150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:4300pF @ 10V
Gate Laddning (Qg) (Max) @ Vgs:65nC @ 5V
FET-typ:P-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):2.5V, 4.5V
Avlopp till källspänning (Vdss):20V
detaljerad beskrivning:P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:36A (Tc)
Email:[email protected]

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