HN1B01FU-Y(L,F,T)
HN1B01FU-Y(L,F,T)
Artikelnummer:
HN1B01FU-Y(L,F,T)
Tillverkare:
Toshiba Semiconductor and Storage
Beskrivning:
TRANS NPN/PNP 50V 0.15A US6
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
27358 Pieces
Leveranstid:
1-2 days
Datablad:
HN1B01FU-Y(L,F,T).pdf

Introduktion

We can supply HN1B01FU-Y(L,F,T), use the request quote form to request HN1B01FU-Y(L,F,T) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HN1B01FU-Y(L,F,T).The price and lead time for HN1B01FU-Y(L,F,T) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HN1B01FU-Y(L,F,T).We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Spänning - Samlare Emitter Breakdown (Max):50V
Vce Mättnad (Max) @ Ib, Ic:300mV @ 10mA, 100mA
Transistortyp:NPN, PNP
Leverantörs Device Package:US6
Serier:-
Effekt - Max:200mW
Förpackning:Cut Tape (CT)
Förpackning / Fodral:6-TSSOP, SC-88, SOT-363
Andra namn:HN1B01FU-Y(LFT)CT
Driftstemperatur:125°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Frekvens - Övergång:120MHz
detaljerad beskrivning:Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6
Likströmsstigning (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
Nuvarande - Collector Cutoff (Max):100nA (ICBO)
Nuvarande - Samlare (Ic) (Max):150mA
Email:[email protected]

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