HN1B01FU-Y(L,F,T)
HN1B01FU-Y(L,F,T)
Part Number:
HN1B01FU-Y(L,F,T)
Producent:
Toshiba Semiconductor and Storage
Opis:
TRANS NPN/PNP 50V 0.15A US6
Stan ołowiu / status RoHS:
Bezołowiowa / zgodna z RoHS
Dostępna Ilość:
27358 Pieces
Czas dostawy:
1-2 days
Arkusz danych:
HN1B01FU-Y(L,F,T).pdf

Wprowadzenie

We can supply HN1B01FU-Y(L,F,T), use the request quote form to request HN1B01FU-Y(L,F,T) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HN1B01FU-Y(L,F,T).The price and lead time for HN1B01FU-Y(L,F,T) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HN1B01FU-Y(L,F,T).We look forward to working with you to establish long-term relations of cooperation

Specyfikacje

Stan New & Unused, Original Packing
Pochodzenie Contact us
Napięcie - kolektor emiter (Max):50V
Vce Nasycenie (Max) @ IB, IC:300mV @ 10mA, 100mA
Typ tranzystora:NPN, PNP
Dostawca urządzeń Pakiet:US6
Seria:-
Moc - Max:200mW
Opakowania:Cut Tape (CT)
Package / Case:6-TSSOP, SC-88, SOT-363
Inne nazwy:HN1B01FU-Y(LFT)CT
temperatura robocza:125°C (TJ)
Rodzaj mocowania:Surface Mount
Poziom czułości na wilgoć (MSL):1 (Unlimited)
Status bezołowiowy / status RoHS:Lead free / RoHS Compliant
Częstotliwość - Transition:120MHz
szczegółowy opis:Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6
DC Prąd Zysk (hFE) (min) @ Ic, Vce:120 @ 2mA, 6V
Obecny - Collector odcięcia (Max):100nA (ICBO)
Obecny - Collector (Ic) (maks):150mA
Email:[email protected]

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