RN1911FETE85LF
RN1911FETE85LF
Part Number:
RN1911FETE85LF
Producent:
Toshiba Semiconductor and Storage
Opis:
TRANS 2NPN PREBIAS 0.1W ES6
Stan ołowiu / status RoHS:
Bezołowiowa / zgodna z RoHS
Dostępna Ilość:
75530 Pieces
Czas dostawy:
1-2 days
Arkusz danych:
RN1911FETE85LF.pdf

Wprowadzenie

We can supply RN1911FETE85LF, use the request quote form to request RN1911FETE85LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1911FETE85LF.The price and lead time for RN1911FETE85LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1911FETE85LF.We look forward to working with you to establish long-term relations of cooperation

Specyfikacje

Stan New & Unused, Original Packing
Pochodzenie Contact us
Napięcie - kolektor emiter (Max):50V
Vce Nasycenie (Max) @ IB, IC:300mV @ 250µA, 5mA
Typ tranzystora:2 NPN - Pre-Biased (Dual)
Dostawca urządzeń Pakiet:ES6
Seria:-
Rezystor - podstawa nadajnika (R2):-
Rezystor - Podstawa (R1):10 kOhms
Moc - Max:100mW
Opakowania:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Inne nazwy:RN1911FE(TE85L,F)
RN1911FETE85LFTR
Rodzaj mocowania:Surface Mount
Poziom czułości na wilgoć (MSL):1 (Unlimited)
Status bezołowiowy / status RoHS:Lead free / RoHS Compliant
Częstotliwość - Transition:250MHz
szczegółowy opis:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DC Prąd Zysk (hFE) (min) @ Ic, Vce:120 @ 1mA, 5V
Obecny - Collector odcięcia (Max):100nA (ICBO)
Obecny - Collector (Ic) (maks):100mA
Email:[email protected]

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