RN1964TE85LF
RN1964TE85LF
Part Number:
RN1964TE85LF
Producent:
Toshiba Semiconductor and Storage
Opis:
TRANS 2NPN PREBIAS 0.2W US6
Stan ołowiu / status RoHS:
Bezołowiowa / zgodna z RoHS
Dostępna Ilość:
22608 Pieces
Czas dostawy:
1-2 days
Arkusz danych:
RN1964TE85LF.pdf

Wprowadzenie

We can supply RN1964TE85LF, use the request quote form to request RN1964TE85LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1964TE85LF.The price and lead time for RN1964TE85LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1964TE85LF.We look forward to working with you to establish long-term relations of cooperation

Specyfikacje

Stan New & Unused, Original Packing
Pochodzenie Contact us
Napięcie - kolektor emiter (Max):50V
Vce Nasycenie (Max) @ IB, IC:300mV @ 250µA, 5mA
Typ tranzystora:2 NPN - Pre-Biased (Dual)
Dostawca urządzeń Pakiet:US6
Seria:-
Rezystor - podstawa nadajnika (R2):47 kOhms
Rezystor - Podstawa (R1):47 kOhms
Moc - Max:200mW
Opakowania:Cut Tape (CT)
Package / Case:6-TSSOP, SC-88, SOT-363
Inne nazwy:RN1964TE85LFCT
Rodzaj mocowania:Surface Mount
Poziom czułości na wilgoć (MSL):1 (Unlimited)
Status bezołowiowy / status RoHS:Lead free / RoHS Compliant
Częstotliwość - Transition:250MHz
szczegółowy opis:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
DC Prąd Zysk (hFE) (min) @ Ic, Vce:80 @ 10mA, 5V
Obecny - Collector odcięcia (Max):100nA (ICBO)
Obecny - Collector (Ic) (maks):100mA
Email:[email protected]

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