RN1911FETE85LF
RN1911FETE85LF
Onderdeel nummer:
RN1911FETE85LF
Fabrikant:
Toshiba Semiconductor and Storage
Beschrijving:
TRANS 2NPN PREBIAS 0.1W ES6
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
75530 Pieces
Aflevertijd:
1-2 days
Data papier:
RN1911FETE85LF.pdf

Invoering

We can supply RN1911FETE85LF, use the request quote form to request RN1911FETE85LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1911FETE85LF.The price and lead time for RN1911FETE85LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1911FETE85LF.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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Spanning - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
transistor Type:2 NPN - Pre-Biased (Dual)
Leverancier Device Pakket:ES6
Serie:-
Weerstand - emitterbasis (R2):-
Weerstand - basis (R1):10 kOhms
Vermogen - Max:100mW
Packaging:Tape & Reel (TR)
Verpakking / doos:SOT-563, SOT-666
Andere namen:RN1911FE(TE85L,F)
RN1911FETE85LFTR
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Frequentie - Transition:250MHz
gedetailleerde beschrijving:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
Email:[email protected]

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