TPN2010FNH,L1Q
TPN2010FNH,L1Q
Delenummer:
TPN2010FNH,L1Q
Produsent:
Toshiba Semiconductor and Storage
Beskrivelse:
MOSFET N-CH 250V 5.6A 8TSON
Lead Free Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgjengelig mengde:
51157 Pieces
Leveringstid:
1-2 days
Dataark:
TPN2010FNH,L1Q.pdf

Introduksjon

We can supply TPN2010FNH,L1Q, use the request quote form to request TPN2010FNH,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPN2010FNH,L1Q.The price and lead time for TPN2010FNH,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPN2010FNH,L1Q.We look forward to working with you to establish long-term relations of cooperation

spesifikasjoner

Tilstand New & Unused, Original Packing
Opprinnelse Contact us
Vgs (th) (Maks) @ Id:4V @ 200µA
Vgs (maks):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Enhetspakke:8-TSON Advance (3.3x3.3)
Serie:U-MOSVIII-H
Rds På (Maks) @ Id, Vgs:198 mOhm @ 2.8A, 10V
Strømdissipasjon (maks):700mW (Ta), 39W (Tc)
emballasje:Cut Tape (CT)
Pakke / tilfelle:8-PowerVDFN
Andre navn:TPN2010FNHL1QCT
Driftstemperatur:150°C (TJ)
Monteringstype:Surface Mount
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Inputkapasitans (Ciss) (Maks) @ Vds:600pF @ 100V
Gateavgift (Qg) (Maks) @ Vgs:7nC @ 10V
FET Type:N-Channel
FET-funksjonen:-
Drivspenning (Maks. Rds På, Min Rds På):10V
Drain til Source Voltage (VDSS):250V
Detaljert beskrivelse:N-Channel 250V 5.6A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:5.6A (Ta)
Email:[email protected]

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