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Huis > producten > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK58E06N1,S1X
TK58E06N1,S1X
TK58E06N1,S1X
Onderdeel nummer:
TK58E06N1,S1X
Fabrikant:
Toshiba Semiconductor and Storage
Beschrijving:
MOSFET N CH 60V 58A TO-220
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
49251 Pieces
Aflevertijd:
1-2 days
Data papier:
TK58E06N1,S1X.pdf
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We can supply TK58E06N1,S1X, use the request quote form to request TK58E06N1,S1X pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK58E06N1,S1X.The price and lead time for TK58E06N1,S1X depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK58E06N1,S1X.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 500µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-220
Serie:U-MOSVIII-H
Rds On (Max) @ Id, VGS:5.4 mOhm @ 29A, 10V
Vermogensverlies (Max):110W (Tc)
Packaging:Tube
Verpakking / doos:TO-220-3
Andere namen:TK58E06N1,S1X(S
TK58E06N1S1X
Temperatuur:150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3400pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:46nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):60V
gedetailleerde beschrijving:N-Channel 60V 58A (Ta) 110W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25 ° C:58A (Ta)
Email:[email protected]

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