TK58E06N1,S1X
TK58E06N1,S1X
Artikelnummer:
TK58E06N1,S1X
Tillverkare:
Toshiba Semiconductor and Storage
Beskrivning:
MOSFET N CH 60V 58A TO-220
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
49251 Pieces
Leveranstid:
1-2 days
Datablad:
TK58E06N1,S1X.pdf

Introduktion

We can supply TK58E06N1,S1X, use the request quote form to request TK58E06N1,S1X pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK58E06N1,S1X.The price and lead time for TK58E06N1,S1X depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK58E06N1,S1X.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4V @ 500µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-220
Serier:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:5.4 mOhm @ 29A, 10V
Effektdissipation (Max):110W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-220-3
Andra namn:TK58E06N1,S1X(S
TK58E06N1S1X
Driftstemperatur:150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:3400pF @ 30V
Gate Laddning (Qg) (Max) @ Vgs:46nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):60V
detaljerad beskrivning:N-Channel 60V 58A (Ta) 110W (Tc) Through Hole TO-220
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:58A (Ta)
Email:[email protected]

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