Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 3.9V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO251-3 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, VGS: | 6 Ohm @ 500mA, 10V |
Vermogensverlies (Max): | 11W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-251-3 Short Leads, IPak, TO-251AA |
Andere namen: | SP000012110 SPU01N60C3 SPU01N60C3-ND SPU01N60C3IN SPU01N60C3IN-ND SPU01N60C3X SPU01N60C3XK |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 650V |
gedetailleerde beschrijving: | N-Channel 650V 800mA (Tc) 11W (Tc) Through Hole PG-TO251-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 800mA (Tc) |
Email: | [email protected] |