Tillstånd | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Vgs (th) (Max) @ Id: | 3.9V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverantörs Device Package: | PG-TO251-3 |
Serier: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 500mA, 10V |
Effektdissipation (Max): | 11W (Tc) |
Förpackning: | Tube |
Förpackning / Fodral: | TO-251-3 Short Leads, IPak, TO-251AA |
Andra namn: | SP000012110 SPU01N60C3 SPU01N60C3-ND SPU01N60C3IN SPU01N60C3IN-ND SPU01N60C3X SPU01N60C3XK |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstyp: | Through Hole |
Fuktkänslighetsnivå (MSL): | 1 (Unlimited) |
Ledningsfri status / RoHS-status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 100pF @ 25V |
Gate Laddning (Qg) (Max) @ Vgs: | 5nC @ 10V |
FET-typ: | N-Channel |
FET-funktionen: | - |
Drivspänning (Max Rds På, Min Rds På): | 10V |
Avlopp till källspänning (Vdss): | 650V |
detaljerad beskrivning: | N-Channel 650V 800mA (Tc) 11W (Tc) Through Hole PG-TO251-3 |
Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 800mA (Tc) |
Email: | [email protected] |