SIR626DP-T1-RE3
SIR626DP-T1-RE3
Onderdeel nummer:
SIR626DP-T1-RE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 60V 100A POWERPAKSO
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
77574 Pieces
Aflevertijd:
1-2 days
Data papier:
SIR626DP-T1-RE3.pdf

Invoering

We can supply SIR626DP-T1-RE3, use the request quote form to request SIR626DP-T1-RE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIR626DP-T1-RE3.The price and lead time for SIR626DP-T1-RE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIR626DP-T1-RE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:3.4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PowerPAK® SO-8
Serie:TrenchFET® Gen IV
Rds On (Max) @ Id, VGS:1.7 mOhm @ 20A, 10V
Vermogensverlies (Max):104W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:PowerPAK® SO-8
Andere namen:SIR626DP-T1-RE3TR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:32 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:5130pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:78nC @ 7.5V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):6V, 10V
Drain naar de Bron Voltage (Vdss):60V
gedetailleerde beschrijving:N-Channel 60V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25 ° C:100A (Tc)
Email:[email protected]

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