SIR624DP-T1-GE3
SIR624DP-T1-GE3
Onderdeel nummer:
SIR624DP-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 200V 18.6A SO-8
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
78231 Pieces
Aflevertijd:
1-2 days
Data papier:
SIR624DP-T1-GE3.pdf

Invoering

We can supply SIR624DP-T1-GE3, use the request quote form to request SIR624DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIR624DP-T1-GE3.The price and lead time for SIR624DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIR624DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PowerPAK® SO-8
Serie:ThunderFET®
Rds On (Max) @ Id, VGS:60 mOhm @ 10A, 10V
Vermogensverlies (Max):52W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:PowerPAK® SO-8
Andere namen:SIR624DP-T1-GE3TR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1110pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 7.5V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):7.5V, 10V
Drain naar de Bron Voltage (Vdss):200V
gedetailleerde beschrijving:N-Channel 200V 18.6A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25 ° C:18.6A (Tc)
Email:[email protected]

Quick Request Quote

Onderdeel nummer
Aantal stuks
Bedrijf
E-mail
Telefoon
Comments