Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 4V @ 250µA |
Vgs (Max): | ±30V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | IPAK (TO-251) |
Serie: | E |
Rds On (Max) @ Id, VGS: | 2.75 Ohm @ 1A, 10V |
Vermogensverlies (Max): | 62.5W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-251-3 Long Leads, IPak, TO-251AB |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 19.6nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 800V |
gedetailleerde beschrijving: | N-Channel 800V 2.8A (Tc) 62.5W (Tc) Through Hole IPAK (TO-251) |
Current - Continuous Drain (Id) @ 25 ° C: | 2.8A (Tc) |
Email: | [email protected] |