SIHU2N80E-GE3
SIHU2N80E-GE3
Onderdeel nummer:
SIHU2N80E-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 800V 2.8A IPAK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
68743 Pieces
Aflevertijd:
1-2 days
Data papier:
SIHU2N80E-GE3.pdf

Invoering

We can supply SIHU2N80E-GE3, use the request quote form to request SIHU2N80E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHU2N80E-GE3.The price and lead time for SIHU2N80E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHU2N80E-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:IPAK (TO-251)
Serie:E
Rds On (Max) @ Id, VGS:2.75 Ohm @ 1A, 10V
Vermogensverlies (Max):62.5W (Tc)
Packaging:Tube
Verpakking / doos:TO-251-3 Long Leads, IPak, TO-251AB
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:315pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:19.6nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):800V
gedetailleerde beschrijving:N-Channel 800V 2.8A (Tc) 62.5W (Tc) Through Hole IPAK (TO-251)
Current - Continuous Drain (Id) @ 25 ° C:2.8A (Tc)
Email:[email protected]

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