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SIHU2N80E-GE3
- Part Number:
- SIHU2N80E-GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET N-CH 800V 2.8A IPAK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 68743 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- SIHU2N80E-GE3.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | IPAK (TO-251) |
| Series: | E |
| Rds On (Max) @ Id, Vgs: | 2.75 Ohm @ 1A, 10V |
| Power Dissipation (Max): | 62.5W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-251-3 Long Leads, IPak, TO-251AB |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 19.6nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 800V |
| Detailed Description: | N-Channel 800V 2.8A (Tc) 62.5W (Tc) Through Hole IPAK (TO-251) |
| Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
| Email: | [email protected] |
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