SI7464DP-T1-GE3
SI7464DP-T1-GE3
Onderdeel nummer:
SI7464DP-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 200V 1.8A PPAK SO-8
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
19588 Pieces
Aflevertijd:
1-2 days
Data papier:
SI7464DP-T1-GE3.pdf

Invoering

We can supply SI7464DP-T1-GE3, use the request quote form to request SI7464DP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7464DP-T1-GE3.The price and lead time for SI7464DP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7464DP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PowerPAK® SO-8
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:240 mOhm @ 2.8A, 10V
Vermogensverlies (Max):1.8W (Ta)
Packaging:Tape & Reel (TR)
Verpakking / doos:PowerPAK® SO-8
Andere namen:SI7464DP-T1-GE3TR
SI7464DPT1GE3
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):6V, 10V
Drain naar de Bron Voltage (Vdss):200V
gedetailleerde beschrijving:N-Channel 200V 1.8A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25 ° C:1.8A (Ta)
Email:[email protected]

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