Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 4V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PowerPAK® SO-8 |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 130 mOhm @ 4.1A, 10V |
Vermogensverlies (Max): | 1.9W (Ta) |
Packaging: | Cut Tape (CT) |
Verpakking / doos: | PowerPAK® SO-8 |
Andere namen: | SI7462DP-T1-GE3CT |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 6V, 10V |
Drain naar de Bron Voltage (Vdss): | 200V |
gedetailleerde beschrijving: | N-Channel 200V 2.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25 ° C: | 2.6A (Ta) |
Email: | [email protected] |