Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 800mV @ 250µA |
Vgs (Max): | ±8V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | 8-TSSOP |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 15 mOhm @ 7.4A, 4.5V |
Vermogensverlies (Max): | 1.05W (Ta) |
Packaging: | Original-Reel® |
Verpakking / doos: | 8-TSSOP (0.173", 4.40mm Width) |
Andere namen: | SI6463BDQ-T1-GE3DKR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 5V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 1.8V, 4.5V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | P-Channel 20V 6.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP |
Current - Continuous Drain (Id) @ 25 ° C: | 6.2A (Ta) |
Email: | [email protected] |