SI6463BDQ-T1-GE3
SI6463BDQ-T1-GE3
Artikelnummer:
SI6463BDQ-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET P-CH 20V 6.2A 8-TSSOP
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
23510 Pieces
Leveranstid:
1-2 days
Datablad:
SI6463BDQ-T1-GE3.pdf

Introduktion

We can supply SI6463BDQ-T1-GE3, use the request quote form to request SI6463BDQ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI6463BDQ-T1-GE3.The price and lead time for SI6463BDQ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI6463BDQ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:8-TSSOP
Serier:TrenchFET®
Rds On (Max) @ Id, Vgs:15 mOhm @ 7.4A, 4.5V
Effektdissipation (Max):1.05W (Ta)
Förpackning:Original-Reel®
Förpackning / Fodral:8-TSSOP (0.173", 4.40mm Width)
Andra namn:SI6463BDQ-T1-GE3DKR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Gate Laddning (Qg) (Max) @ Vgs:60nC @ 5V
FET-typ:P-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):1.8V, 4.5V
Avlopp till källspänning (Vdss):20V
detaljerad beskrivning:P-Channel 20V 6.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:6.2A (Ta)
Email:[email protected]

Snabbsökcitation

Artikelnummer
Kvantitet
Företag
E-post
Telefon
kommentarer