Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 4V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | SOT-23-3 (TO-236) |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 270 mOhm @ 1.2A, 10V |
Vermogensverlies (Max): | 760mW (Ta), 2.5W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | TO-236-3, SC-59, SOT-23-3 |
Andere namen: | SI2337DS-T1-E3TR SI2337DST1E3 |
Temperatuur: | -50°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 33 Weeks |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 40V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 6V, 10V |
Drain naar de Bron Voltage (Vdss): | 80V |
gedetailleerde beschrijving: | P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236) |
Current - Continuous Drain (Id) @ 25 ° C: | 2.2A (Tc) |
Email: | [email protected] |