NTD4960N-35G
NTD4960N-35G
Onderdeel nummer:
NTD4960N-35G
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beschrijving:
MOSFET N-CH 30V 11.1A IPAK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
8746 Pieces
Aflevertijd:
1-2 days
Data papier:
NTD4960N-35G.pdf

Invoering

We can supply NTD4960N-35G, use the request quote form to request NTD4960N-35G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NTD4960N-35G.The price and lead time for NTD4960N-35G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NTD4960N-35G.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:I-PAK
Serie:-
Rds On (Max) @ Id, VGS:8 mOhm @ 30A, 10V
Vermogensverlies (Max):1.07W (Ta), 35.71W (Tc)
Packaging:Tube
Verpakking / doos:TO-251-3 Stub Leads, IPak
Andere namen:NTD4960N-35GOS
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1300pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):4.5V, 10V
Drain naar de Bron Voltage (Vdss):30V
gedetailleerde beschrijving:N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25 ° C:8.9A (Ta), 55A (Tc)
Email:[email protected]

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