NTD4960N-35G
NTD4960N-35G
Part Number:
NTD4960N-35G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 30V 11.1A IPAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
8746 Pieces
Delivery Time:
1-2 days
Data sheet:
NTD4960N-35G.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:-
Rds On (Max) @ Id, Vgs:8 mOhm @ 30A, 10V
Power Dissipation (Max):1.07W (Ta), 35.71W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Stub Leads, IPak
Other Names:NTD4960N-35GOS
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1300pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C:8.9A (Ta), 55A (Tc)
Email:[email protected]

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