NDD60N900U1-1G
NDD60N900U1-1G
Onderdeel nummer:
NDD60N900U1-1G
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beschrijving:
MOSFET N-CH 600V 5.9A IPAK-4
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
10789 Pieces
Aflevertijd:
1-2 days
Data papier:
NDD60N900U1-1G.pdf

Invoering

We can supply NDD60N900U1-1G, use the request quote form to request NDD60N900U1-1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NDD60N900U1-1G.The price and lead time for NDD60N900U1-1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NDD60N900U1-1G.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:I-PAK
Serie:-
Rds On (Max) @ Id, VGS:900 mOhm @ 2.5A, 10V
Vermogensverlies (Max):74W (Tc)
Packaging:Tube
Verpakking / doos:TO-251-3 Short Leads, IPak, TO-251AA
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):3 (168 Hours)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:360pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):600V
gedetailleerde beschrijving:N-Channel 600V 5.7A (Tc) 74W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25 ° C:5.7A (Tc)
Email:[email protected]

Quick Request Quote

Onderdeel nummer
Aantal stuks
Bedrijf
E-mail
Telefoon
Comments