Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 4.5V @ 730µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO262-3 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, VGS: | 190 mOhm @ 7.3A, 10V |
Vermogensverlies (Max): | 151W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andere namen: | IPI65R190CFD IPI65R190CFD-ND SP000905386 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 650V |
gedetailleerde beschrijving: | N-Channel 650V 17.5A (Tc) 151W (Tc) Through Hole PG-TO262-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 17.5A (Tc) |
Email: | [email protected] |