FDP2D3N10C
Onderdeel nummer:
FDP2D3N10C
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beschrijving:
MOSFET N-CH 100V 222A TO220-3
beschikbare kwaliteit:
47115 Pieces
Aflevertijd:
1-2 days
Data papier:
FDP2D3N10C.pdf

Invoering

We can supply FDP2D3N10C, use the request quote form to request FDP2D3N10C pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDP2D3N10C.The price and lead time for FDP2D3N10C depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDP2D3N10C.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 700µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-220-3
Serie:PowerTrench®
Rds On (Max) @ Id, VGS:2.3 mOhm @ 100A, 10V
Vermogensverlies (Max):214W (Tc)
Verpakking / doos:TO-220-3
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Through Hole
Fabrikant Standaard Levertijd:22 Weeks
Input Capacitance (Ciss) (Max) @ Vds:11180pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:152nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):100V
gedetailleerde beschrijving:N-Channel 100V 222A (Tc) 214W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25 ° C:222A (Tc)
Email:[email protected]

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