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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > APT8M80K
APT8M80K
Modello di prodotti:
APT8M80K
fabbricante:
Microsemi
Descrizione:
MOSFET N-CH 800V 8A TO-220
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
75921 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
1.APT8M80K.pdf2.APT8M80K.pdf
Inchiesta

introduzione

We can supply APT8M80K, use the request quote form to request APT8M80K pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT8M80K.The price and lead time for APT8M80K depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT8M80K.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:5V @ 500µA
Vgs (Max):±30V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:TO-220 [K]
Serie:POWER MOS 8™
Rds On (max) a Id, Vgs:1.35 Ohm @ 4A, 10V
Dissipazione di potenza (max):225W (Tc)
imballaggio:Tube
Contenitore / involucro:TO-220-3
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:1335pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:43nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):800V
Descrizione dettagliata:N-Channel 800V 8A (Tc) 225W (Tc) Through Hole TO-220 [K]
Corrente - Drain continuo (Id) @ 25 ° C:8A (Tc)
Email:[email protected]

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