Italia
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
Su di noi | Contatto | Richiedi un preventivo |
Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistori-IGBTs-singolo > APT95GR65JDU60
APT95GR65JDU60
Modello di prodotti:
APT95GR65JDU60
fabbricante:
Microsemi
Descrizione:
INSULATED GATE BIPOLAR TRANSISTO
Stato Lead senza piombo / RoHS:
Senza piombo / RoHS conforme
quantità disponibile:
12306 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
APT95GR65JDU60.pdf
Inchiesta

introduzione

We can supply APT95GR65JDU60, use the request quote form to request APT95GR65JDU60 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT95GR65JDU60.The price and lead time for APT95GR65JDU60 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT95GR65JDU60.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Tensione - rottura collettore-emettitore (max):650V
Vce (on) (max) a VGE, Ic:2.4V @ 15V, 95A
Condizione di test:433V, 95A, 4.3 Ohm, 15V
Td (on / off) @ 25 ° C:29ns/226ns
Contenitore dispositivo fornitore:SOT-227
Serie:-
Potenza - Max:446W
imballaggio:Bulk
Contenitore / involucro:SOT-227-4, miniBLOC
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Tipo di ingresso:Standard
Tipo IGBT:NPT
carica gate:420nC
Descrizione dettagliata:IGBT NPT 650V 135A 446W Chassis Mount SOT-227
Corrente - collettore Pulsed (Icm):380A
Corrente - collettore (Ic) (max):135A
Email:[email protected]

Richiesta rapida citazione

Modello di prodotti
Quantità
Azienda
E-mail
Numero di telefono
Note / Commenti

Parti relative per APT95GR65JDU60

Immagine Modello di prodotti Produttori Descrizione vista
APT90DR160HJ Image APT90DR160HJ Microsemi DIODE MODULE 1.6V SOT227 Inchiesta
APT8M80K Microsemi MOSFET N-CH 800V 8A TO-220 Inchiesta
APT9M100B Image APT9M100B Microsemi MOSFET N-CH 1000V 9A TO-247 Inchiesta
APT85GR120L Image APT85GR120L Microsemi IGBT 1200V 170A 962W TO264 Inchiesta
APT8DQ60KCTG Microsemi DIODE ARRAY GP 600V 8A TO220 Inchiesta
APT85GR120JD60 Image APT85GR120JD60 Microsemi IGBT MODULE 1200V 116A ISOTOP Inchiesta
APT8M100B Image APT8M100B Microsemi MOSFET N-CH 1000V 8A TO-247 Inchiesta
APTC60AM35T1G Microsemi MOSFET 2N-CH 600V 72A SP1 Inchiesta
APTC60AM35SCTG Image APTC60AM35SCTG Microsemi MOSFET 2N-CH 600V 72A SP4 Inchiesta
APT97N65LC6 Microsemi MOSFET N-CH 650V 97A TO-264 Inchiesta
APTC60AM242G Image APTC60AM242G Microsemi MOSFET 2N-CH 600V 95A SP2 Inchiesta
APT9F100B Image APT9F100B Microsemi MOSFET N-CH 1000V 9A TO-247 Inchiesta
APTC60AM18SCG Image APTC60AM18SCG Microsemi MOSFET 2N-CH 600V 143A SP6 Inchiesta
APTC60AM24T1G Microsemi MOSFET 2N-CH 600V 95A SP1 Inchiesta
APT94N65B2C3G Image APT94N65B2C3G Microsemi MOSFET N-CH 650V 94A TO-247 Inchiesta
APTC60AM24SCTG Microsemi MOSFET 2N-CH 600V 95A SP4 Inchiesta
APT94N65B2C6 Image APT94N65B2C6 Microsemi MOSFET N-CH 650V 95A T-MAX Inchiesta
APT94N60L2C3G Image APT94N60L2C3G Microsemi MOSFET N-CH 600V 94A TO264 Inchiesta
APT9F100S Image APT9F100S Microsemi MOSFET N-CH 1000V 9A D3PAK Inchiesta
APT95GR65B2 Image APT95GR65B2 Microsemi IGBT 650V 208A 892W T-MAX Inchiesta

Latest Notizie